Samsung is known for outfitting its Galaxy S flagship smartphones with the latest Qualcomm Snapdragon premium chip and the Galaxy S8 may be no different. Last week, Qualcomm and Samsung announced their collaboration on the Snapdragon 835 chip, which features 10nm FinFET technology. The chip is expected to ship on devices releasing in early 2017, according to Samsung and Qualcomm. A recent leak indicates that the Galaxy S8 may be one of those devices.
The 10nm FinFET technology used on the Snapdragon 835 allows for greater performance and lower power consumption, compared to older chip models. This may coincide with support for greater RAM capacities on smartphones. A Snapdragon 835 spec list leaked by the Chinese tech blog, Anzhuo, suggests the Galaxy S8 may feature 6GB of RAM. If so, it would be the first smartphone with global distribution to feature such a high RAM capacity.
Anzhuo also claims the device in its leaked specs list will release during the first quarter of 2017. Pundits deduce that the device is the Galaxy S8 and that it will have an Mobile World Congress debut. Some rumors have suggested an early release date for the Galaxy S8, while others have suggested a later than usual launch. However, Samsung has stated that its launch cycle for the Galaxy S8 was decided since before the release of the Galaxy Note 7 and remains intact. Mobile World Congress 2017 takes place from Feb. 27 to March 2.
Often manufacturers host launch events during the press days, two to three days prior to the conference. Samsung is known for hosting its Galaxy S device launch events during this time, meaning the Galaxy S8 could be announced between Feb. 24 and 26. At this time, Samsung has not confirmed any launch details for the smartphone.
Rumors also suggest the Galaxy S8 may feature a personal assistant software called Bixby, which would be Samsung’s answer to Apple’s Siri or Windows’ Cortana. The smartphone may also include camera and design upgrades and a 4K resolution display.